Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
200 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
4.6mm
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
2.6mm
Transistor Material
Si
Inaltime
1.6mm
Detalii produs
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 3,60
€ 0,36 Buc. (Livrat pe rola) (fara TVA)
€ 4,36
€ 0,436 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 3,60
€ 0,36 Buc. (Livrat pe rola) (fara TVA)
€ 4,36
€ 0,436 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
200 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
4.6mm
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
2.6mm
Transistor Material
Si
Inaltime
1.6mm
Detalii produs


