Documente tehnice
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Latime
1.4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
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Documente tehnice
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
180 mA
Maximum Drain Source Voltage
50 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Latime
1.4mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs