Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-363
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Latime
1.35mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
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Buc. (Livrat pe rola) (fara TVA)
€ 0,286
Buc. (Livrat pe rola) (cu TVA)
40
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
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400 - 760 | € 0,09 | € 3,60 |
800+ | € 0,09 | € 3,60 |
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-363
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Latime
1.35mm
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs