Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Dimensiune celula
BSS138AKA
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.06 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,15
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,178
Buc. (Intr-un pachet de 100) (cu TVA)
100
€ 0,15
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,178
Buc. (Intr-un pachet de 100) (cu TVA)
100
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
100 - 400 | € 0,15 | € 15,00 |
500 - 900 | € 0,14 | € 14,00 |
1000 - 2400 | € 0,13 | € 13,00 |
2500 - 4900 | € 0,12 | € 12,00 |
5000+ | € 0,10 | € 10,00 |
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Dimensiune celula
BSS138AKA
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.06 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs