Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
3mm
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,15
Buc. (Livrat pe rola) (fara TVA)
€ 0,178
Buc. (Livrat pe rola) (cu TVA)
100
€ 0,15
Buc. (Livrat pe rola) (fara TVA)
€ 0,178
Buc. (Livrat pe rola) (cu TVA)
100
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 100 | € 0,15 | € 15,00 |
200 - 400 | € 0,11 | € 11,00 |
500 - 900 | € 0,09 | € 9,00 |
1000 - 1900 | € 0,08 | € 8,00 |
2000+ | € 0,08 | € 8,00 |
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
3mm
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs