Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
-5 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
-1.9 V
Maximum Collector Base Voltage
-80 V
Maximum Collector Emitter Saturation Voltage
-1.3 V
Maximum Collector Cut-off Current
-0.00005mA
Dimensiuni
6.7 x 3.7 x 1.7mm
Latime
3.7mm
Inaltime
1.7mm
Frecventa minima de auto-rezonanta
-65 °C
Maximum Power Dissipation
1.25 W
Lungime
6.7mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
Darlington Transistors, Nexperia
Bipolar Transistors, Nexperia
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
10
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
-5 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
-1.9 V
Maximum Collector Base Voltage
-80 V
Maximum Collector Emitter Saturation Voltage
-1.3 V
Maximum Collector Cut-off Current
-0.00005mA
Dimensiuni
6.7 x 3.7 x 1.7mm
Latime
3.7mm
Inaltime
1.7mm
Frecventa minima de auto-rezonanta
-65 °C
Maximum Power Dissipation
1.25 W
Lungime
6.7mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs


