Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
210 mA
Maximum Drain Source Voltage
300 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
17 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1.95V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Latime
3.7mm
Transistor Material
Si
Inaltime
1.7mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Standard
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
210 mA
Maximum Drain Source Voltage
300 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
17 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1.95V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Latime
3.7mm
Transistor Material
Si
Inaltime
1.7mm
Tara de origine
China
Detalii produs


