Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
225 mA
Maximum Drain Source Voltage
200 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Latime
3.7mm
Transistor Material
Si
Inaltime
1.7mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
Standard
10
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
P
Maximum Continuous Drain Current
225 mA
Maximum Drain Source Voltage
200 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Latime
3.7mm
Transistor Material
Si
Inaltime
1.7mm
Tara de origine
China
Detalii produs


