Documente tehnice
Specificatii
Marca
NexperiaTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
45 V
Tip pachet
SOT-23 (TO-236AB)
Montare
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
1 x 3 x 1.4mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
Small Signal NPN Transistors
Bipolar Transistors, Nexperia
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
Impachetare pentru productie (Rola)
50
P.O.A.
Impachetare pentru productie (Rola)
50
Documente tehnice
Specificatii
Marca
NexperiaTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
45 V
Tip pachet
SOT-23 (TO-236AB)
Montare
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
1 x 3 x 1.4mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs