Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-666
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
390 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Latime
1.3mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.6mm
Detalii produs
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
40
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
40
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-666
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
390 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
1.7mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Latime
1.3mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.6mm
Detalii produs


