Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,36
Buc. (Livrat pe rola) (fara TVA)
€ 0,428
Buc. (Livrat pe rola) (cu TVA)
50
€ 0,36
Buc. (Livrat pe rola) (fara TVA)
€ 0,428
Buc. (Livrat pe rola) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
50 - 50 | € 0,36 | € 18,00 |
100 - 200 | € 0,15 | € 7,50 |
250 - 450 | € 0,14 | € 7,00 |
500 - 950 | € 0,13 | € 6,50 |
1000+ | € 0,11 | € 5,50 |
Documente tehnice
Specificatii
Marca
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 2.5 V
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
1mm
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs