Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.08mm
Latime
4.06mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
0.85V
Inaltime
5.33mm
Detalii produs
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,46
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,547
Buc. (Intr-un pachet de 25) (cu TVA)
25
€ 0,46
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,547
Buc. (Intr-un pachet de 25) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 75 | € 0,46 | € 11,50 |
100+ | € 0,41 | € 10,25 |
Documente tehnice
Specificatii
Marca
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Tip pachet
TO-92
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.08mm
Latime
4.06mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
0.85V
Inaltime
5.33mm
Detalii produs
Supertex N-Channel Enhancement Mode MOSFET Transistors
The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.