Documente tehnice
Specificatii
Marca
MicrochipChannel Type
P
Maximum Continuous Drain Current
175 mA
Maximum Drain Source Voltage
40 V
Tip pachet
TO-92
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.06mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5.08mm
Inaltime
5.33mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
2V
Tara de origine
Philippines
Detalii produs
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
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Incercati din nou mai tarziu
€ 0,63
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Buc. (Intr-o punga de 1000) (cu TVA)
1000
€ 0,63
Buc. (Intr-o punga de 1000) (fara TVA)
€ 0,75
Buc. (Intr-o punga de 1000) (cu TVA)
1000
Documente tehnice
Specificatii
Marca
MicrochipChannel Type
P
Maximum Continuous Drain Current
175 mA
Maximum Drain Source Voltage
40 V
Tip pachet
TO-92
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.06mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5.08mm
Inaltime
5.33mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
2V
Tara de origine
Philippines
Detalii produs
Supertex P-Channel Enhancement Mode MOSFET Transistors
The Supertex range of P-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.