Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220F
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.71mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Latime
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
16.13mm
Forward Diode Voltage
1.4V
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.
MOSFET Transistors, MagnaChip
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Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220F
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.71mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Latime
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
16.13mm
Forward Diode Voltage
1.4V
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
Super Junction (SJ) MOSFET
These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.