Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
13.1 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
23.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
4.9mm
Typical Gate Charge @ Vgs
7.8 nC @ 10 V
Latime
3.9mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.5mm
Tara de origine
Korea, Republic Of
Detalii produs
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
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Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
13.1 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
23.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
4.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
4.9mm
Typical Gate Charge @ Vgs
7.8 nC @ 10 V
Latime
3.9mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.5mm
Tara de origine
Korea, Republic Of
Detalii produs
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.