Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
153 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
223 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Latime
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
16.51mm
Tara de origine
Korea, Republic Of
Detalii produs
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
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Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
153 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
223 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Latime
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
16.51mm
Tara de origine
Korea, Republic Of
Detalii produs
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.