Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.93mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Inaltime
16.13mm
Forward Diode Voltage
1.4V
Temperatura minima de lucru
-55 °C
Detalii produs
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,02
Each (In a Tube of 10) (fara TVA)
€ 1,214
Each (In a Tube of 10) (cu TVA)
10
€ 1,02
Each (In a Tube of 10) (fara TVA)
€ 1,214
Each (In a Tube of 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
10 - 40 | € 1,02 | € 10,20 |
50 - 90 | € 0,91 | € 9,10 |
100 - 240 | € 0,84 | € 8,40 |
250 - 490 | € 0,77 | € 7,70 |
500+ | € 0,70 | € 7,00 |
Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.93mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Inaltime
16.13mm
Forward Diode Voltage
1.4V
Temperatura minima de lucru
-55 °C
Detalii produs
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.