Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
400 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Latime
6.22mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.4V
PRICED TO CLEAR
Yes
Inaltime
2.39mm
Tara de origine
China
Detalii produs
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
400 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Latime
6.22mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.4V
PRICED TO CLEAR
Yes
Inaltime
2.39mm
Tara de origine
China
Detalii produs
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.