Documente tehnice
Specificatii
Marca
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
Y3 DCB
Configuration
Single
Montare
Panel Mount
Channel Type
N
Numar pini
5
Transistor Configuration
Single
Dimensiuni
110 x 62 x 30mm
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Incercati din nou mai tarziu
€ 143,49
Buc. (Intr-o cutie de 2) (fara TVA)
€ 170,753
Buc. (Intr-o cutie de 2) (cu TVA)
2
€ 143,49
Buc. (Intr-o cutie de 2) (fara TVA)
€ 170,753
Buc. (Intr-o cutie de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Cutie |
---|---|---|
2 - 8 | € 143,49 | € 286,98 |
10 - 18 | € 134,59 | € 269,18 |
20+ | € 130,00 | € 260,00 |
Documente tehnice
Specificatii
Marca
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Tip pachet
Y3 DCB
Configuration
Single
Montare
Panel Mount
Channel Type
N
Numar pini
5
Transistor Configuration
Single
Dimensiuni
110 x 62 x 30mm
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+150 °C
Detalii produs
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.