Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
IXYSProduct Type
IGBT Module
Configuration
Single
Tip pachet
Y4-M5
Channel Type
Type N
Numar pini
7
Frecventa minima de auto-rezonanta
-40°C
Temperatura maxima de lucru
150°C
Latime
34 mm
Lungime
94mm
Inaltime
30mm
Detalii produs
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii despre stoc temporar indisponibile
€ 360,06
€ 60,01 Buc. (Intr-o cutie de 6) (fara TVA)
€ 435,67
€ 72,612 Buc. (Intr-o cutie de 6) (cu TVA)
6
€ 360,06
€ 60,01 Buc. (Intr-o cutie de 6) (fara TVA)
€ 435,67
€ 72,612 Buc. (Intr-o cutie de 6) (cu TVA)
Informatii despre stoc temporar indisponibile
6
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
IXYSProduct Type
IGBT Module
Configuration
Single
Tip pachet
Y4-M5
Channel Type
Type N
Numar pini
7
Frecventa minima de auto-rezonanta
-40°C
Temperatura maxima de lucru
150°C
Latime
34 mm
Lungime
94mm
Inaltime
30mm
Detalii produs
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


