Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
500 V
Dimensiune celula
HiperFET, Polar3
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
695 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
5.3mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
16.26mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Inaltime
21.46mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
United States
Detalii produs
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 8,86
Each (In a Tube of 30) (fara TVA)
€ 10,543
Each (In a Tube of 30) (cu TVA)
30
€ 8,86
Each (In a Tube of 30) (fara TVA)
€ 10,543
Each (In a Tube of 30) (cu TVA)
30
Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
500 V
Dimensiune celula
HiperFET, Polar3
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
695 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
5.3mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
16.26mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Inaltime
21.46mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
United States
Detalii produs
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS