Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
850 V
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
2 + Tab
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
7 @ 10 V nC
Latime
10.92mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.41mm
Inaltime
4.7mm
Dimensiune celula
HiperFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.4V
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P.O.A.
50
Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
850 V
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
2 + Tab
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
7 @ 10 V nC
Latime
10.92mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.41mm
Inaltime
4.7mm
Dimensiune celula
HiperFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.4V