Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Dimensiune celula
IRLML2502
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
8 nC @ 5 V
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,13
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,155
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,13
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,155
Buc. (Pe o rola de 3000) (cu TVA)
3000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 3000 | € 0,13 | € 390,00 |
6000 - 6000 | € 0,12 | € 360,00 |
9000+ | € 0,11 | € 330,00 |
Documente tehnice
Specificatii
Channel Type
N
Maximum Continuous Drain Current
4.2 A
Maximum Drain Source Voltage
20 V
Dimensiune celula
IRLML2502
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Latime
1.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
8 nC @ 5 V
Inaltime
1.02mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V