Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20.7 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220 FP
Dimensiune celula
SPA20N60C3
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
34.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.65mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Latime
4.85mm
Number of Elements per Chip
1
Forward Diode Voltage
0
Typical Power Gain
0
Inaltime
16.15mm
Temperatura minima de lucru
-55 °C
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 5,47
Buc. (Intr-un pachet de 2) (fara TVA)
€ 6,509
Buc. (Intr-un pachet de 2) (cu TVA)
2
€ 5,47
Buc. (Intr-un pachet de 2) (fara TVA)
€ 6,509
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 5,47 | € 10,94 |
10 - 18 | € 5,00 | € 10,00 |
20 - 48 | € 4,46 | € 8,92 |
50 - 98 | € 3,98 | € 7,96 |
100+ | € 3,74 | € 7,48 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20.7 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220 FP
Dimensiune celula
SPA20N60C3
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
34.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.65mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Latime
4.85mm
Number of Elements per Chip
1
Forward Diode Voltage
0
Typical Power Gain
0
Inaltime
16.15mm
Temperatura minima de lucru
-55 °C