Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
6.9 A
Maximum Drain Source Voltage
20 V
Serie
HEXFET
Tip pachet
TSOP-6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.75mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 9,60
€ 0,32 Buc. (Intr-un pachet de 30) (fara TVA)
€ 11,62
€ 0,387 Buc. (Intr-un pachet de 30) (cu TVA)
Standard
30
€ 9,60
€ 0,32 Buc. (Intr-un pachet de 30) (fara TVA)
€ 11,62
€ 0,387 Buc. (Intr-un pachet de 30) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
30
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
6.9 A
Maximum Drain Source Voltage
20 V
Serie
HEXFET
Tip pachet
TSOP-6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.75mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


