Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
100 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Latime
6.22mm
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Inaltime
2.39mm
Dimensiune celula
HEXFET
Temperatura minima de lucru
-55 °C
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,48
Buc. (Pe o rola de 2000) (fara TVA)
€ 0,571
Buc. (Pe o rola de 2000) (cu TVA)
2000
€ 0,48
Buc. (Pe o rola de 2000) (fara TVA)
€ 0,571
Buc. (Pe o rola de 2000) (cu TVA)
2000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
100 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Latime
6.22mm
Number of Elements per Chip
1
Lungime
6.73mm
Typical Gate Charge @ Vgs
34 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Inaltime
2.39mm
Dimensiune celula
HEXFET
Temperatura minima de lucru
-55 °C
Tara de origine
China