Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
30 V
Tip pachet
Micro6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
325 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
7.2 nC @ 10 V
Latime
1.75mm
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Inaltime
1.3mm
Tara de origine
Thailand
Detalii produs
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
P.O.A.
Buc. (Intr-un pachet de 50) (fara TVA)
Standard
50
P.O.A.
Buc. (Intr-un pachet de 50) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
50
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
30 V
Tip pachet
Micro6
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
325 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
7.2 nC @ 10 V
Latime
1.75mm
Serie
HEXFET
Temperatura minima de lucru
-55 °C
Inaltime
1.3mm
Tara de origine
Thailand
Detalii produs
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


