Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
750 W
Tip pachet
Super-247
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
8 → 30kHz
Transistor Configuration
Single
Dimensiuni
16 x 5.5 x 20.8mm
Temperatura maxima de lucru
+175 °C
Energy Rating
500mJ
Temperatura minima de lucru
-55 °C
Tara de origine
Mexico
Detalii produs
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
€ 210,50
€ 21,05 Each (Supplied in a Tube) (fara TVA)
€ 254,70
€ 25,47 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
€ 210,50
€ 21,05 Each (Supplied in a Tube) (fara TVA)
€ 254,70
€ 25,47 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 10 - 24 | € 21,05 |
| 25 - 49 | € 19,97 |
| 50 - 99 | € 18,46 |
| 100+ | € 17,19 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
750 W
Tip pachet
Super-247
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Switching Speed
8 → 30kHz
Transistor Configuration
Single
Dimensiuni
16 x 5.5 x 20.8mm
Temperatura maxima de lucru
+175 °C
Energy Rating
500mJ
Temperatura minima de lucru
-55 °C
Tara de origine
Mexico
Detalii produs
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.


