Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
HEXFET
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
36 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
15.9mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Latime
5.3mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
20.3mm
Tara de origine
Mexico
Detalii produs
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Incercati din nou mai tarziu
€ 1,91
Each (In a Tube of 25) (fara TVA)
€ 2,273
Each (In a Tube of 25) (cu TVA)
25
€ 1,91
Each (In a Tube of 25) (fara TVA)
€ 2,273
Each (In a Tube of 25) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
25 - 25 | € 1,91 | € 47,75 |
50 - 100 | € 1,75 | € 43,75 |
125 - 225 | € 1,66 | € 41,50 |
250 - 600 | € 1,58 | € 39,50 |
625+ | € 1,46 | € 36,50 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
HEXFET
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
36 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
15.9mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Latime
5.3mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
20.3mm
Tara de origine
Mexico
Detalii produs
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.