Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
60 V
Dimensiune celula
HEXFET
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Latime
4.83mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Inaltime
9.02mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,41
Each (In a Tube of 50) (fara TVA)
€ 1,678
Each (In a Tube of 50) (cu TVA)
50
€ 1,41
Each (In a Tube of 50) (fara TVA)
€ 1,678
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,41 | € 70,50 |
100 - 200 | € 1,21 | € 60,50 |
250 - 450 | € 1,12 | € 56,00 |
500 - 950 | € 1,08 | € 54,00 |
1000+ | € 1,04 | € 52,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
60 V
Dimensiune celula
HEXFET
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Latime
4.83mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Inaltime
9.02mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.