Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
12 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Inaltime
1.5mm
Dimensiune celula
IRF7470PbF
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
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P.O.A.
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P.O.A.
4000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
12 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Inaltime
1.5mm
Dimensiune celula
IRF7470PbF
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V