Documente tehnice
Specificatii
Marca
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Tip pachet
SO-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Latime
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Inaltime
1.5mm
Dimensiune celula
IRF7343PbF
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,98
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,166
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 0,98
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,166
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 0,98 | € 9,80 |
50 - 90 | € 0,74 | € 7,40 |
100 - 240 | € 0,69 | € 6,90 |
250 - 490 | € 0,64 | € 6,40 |
500+ | € 0,59 | € 5,90 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Tip pachet
SO-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Latime
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Inaltime
1.5mm
Dimensiune celula
IRF7343PbF
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V