Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
4.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Inaltime
1.5mm
Dimensiune celula
IRF7205PbF
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
4.6 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Inaltime
1.5mm
Dimensiune celula
IRF7205PbF
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V