Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Dimensiune celula
IRF1407PbF
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Lungime
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Latime
4.83mm
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Inaltime
16.51mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,83
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,368
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 2,83
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,368
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 2,83 | € 14,15 |
25 - 45 | € 2,47 | € 12,35 |
50 - 120 | € 2,29 | € 11,45 |
125 - 245 | € 2,12 | € 10,60 |
250+ | € 1,97 | € 9,85 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Dimensiune celula
IRF1407PbF
Tip pachet
TO-220AB
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Lungime
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Latime
4.83mm
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Inaltime
16.51mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V