Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Tip pachet
TO-220AB
Dimensiune celula
IRF1407PbF
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Latime
4.83mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
16.51mm
Forward Diode Voltage
1.3V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,11
Each (In a Tube of 50) (fara TVA)
€ 2,511
Each (In a Tube of 50) (cu TVA)
50
€ 2,11
Each (In a Tube of 50) (fara TVA)
€ 2,511
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 2,11 | € 105,50 |
100 - 200 | € 1,66 | € 83,00 |
250 - 450 | € 1,55 | € 77,50 |
500 - 950 | € 1,42 | € 71,00 |
1000+ | € 1,32 | € 66,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Tip pachet
TO-220AB
Dimensiune celula
IRF1407PbF
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Latime
4.83mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
16.51mm
Forward Diode Voltage
1.3V