Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Dimensiune celula
CoolMOS P6
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
16.13mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Latime
5.21mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Inaltime
21.1mm
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Incercati din nou mai tarziu
€ 3,66
Each (Supplied in a Tube) (fara TVA)
€ 4,355
Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
€ 3,66
Each (Supplied in a Tube) (fara TVA)
€ 4,355
Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
5 - 20 | € 3,66 | € 18,30 |
25 - 45 | € 2,86 | € 14,30 |
50 - 120 | € 2,63 | € 13,15 |
125 - 245 | € 2,44 | € 12,20 |
250+ | € 2,26 | € 11,30 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Dimensiune celula
CoolMOS P6
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
16.13mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Latime
5.21mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Inaltime
21.1mm
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.