Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IPT015N10N5
Tip pachet
HSOF-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.1mm
Typical Gate Charge @ Vgs
169 nC @ 10 V
Latime
10.58mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Inaltime
2.4mm
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Buc. (Intr-un pachet de 5) (fara TVA)
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Buc. (Intr-un pachet de 5) (cu TVA)
5
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IPT015N10N5
Tip pachet
HSOF-8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.1mm
Typical Gate Charge @ Vgs
169 nC @ 10 V
Latime
10.58mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Inaltime
2.4mm