Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Tip pachet
TO-220
Dimensiune celula
OptiMOS P
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10mm
Latime
4.4mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
15.65mm
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 1,59
Each (In a Tube of 50) (fara TVA)
€ 1,892
Each (In a Tube of 50) (cu TVA)
50
€ 1,59
Each (In a Tube of 50) (fara TVA)
€ 1,892
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,59 | € 79,50 |
100 - 200 | € 1,39 | € 69,50 |
250+ | € 1,30 | € 65,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Tip pachet
TO-220
Dimensiune celula
OptiMOS P
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10mm
Latime
4.4mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
15.65mm
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.