Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
700 V
Dimensiune celula
CoolMOS C7
Tip pachet
TO-220
Dimensiune celula
CoolMOS™ C7
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Latime
15.95mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Inaltime
4.57mm
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 2,98
Each (Supplied in a Tube) (fara TVA)
€ 3,546
Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
4
€ 2,98
Each (Supplied in a Tube) (fara TVA)
€ 3,546
Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
4
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
4 - 36 | € 2,98 | € 11,92 |
40 - 96 | € 2,60 | € 10,40 |
100 - 196 | € 2,44 | € 9,76 |
200 - 396 | € 2,26 | € 9,04 |
400+ | € 2,08 | € 8,32 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
700 V
Dimensiune celula
CoolMOS C7
Tip pachet
TO-220
Dimensiune celula
CoolMOS™ C7
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Latime
15.95mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Inaltime
4.57mm
Detalii produs
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.