Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
33 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Temperatura maxima de lucru
+175 °C
Lungime
5.15mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
5.9mm
Transistor Material
Si
Number of Elements per Chip
2
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Inaltime
0.75mm
Dimensiune celula
OptiMOS
Detalii produs
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
33 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Temperatura maxima de lucru
+175 °C
Lungime
5.15mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
5.9mm
Transistor Material
Si
Number of Elements per Chip
2
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Inaltime
0.75mm
Dimensiune celula
OptiMOS
Detalii produs
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.