Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
100 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
15.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
59 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.5mm
Latime
6.22mm
Transistor Material
Si
Serie
OptiMOS T
Temperatura minima de lucru
-55 °C
Inaltime
2.3mm
Detalii produs
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Standard
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
100 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
15.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
59 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.5mm
Latime
6.22mm
Transistor Material
Si
Serie
OptiMOS T
Temperatura minima de lucru
-55 °C
Inaltime
2.3mm
Detalii produs
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


