Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Dimensiune celula
IPD600N25N3 G
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
7.47mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Inaltime
2.41mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,49
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,963
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 2,49
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,963
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 10 | € 2,49 | € 24,90 |
20 - 40 | € 1,97 | € 19,70 |
50 - 90 | € 1,83 | € 18,30 |
100 - 240 | € 1,70 | € 17,00 |
250+ | € 1,54 | € 15,40 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Dimensiune celula
IPD600N25N3 G
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
7.47mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Inaltime
2.41mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V