Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-252
Montare
Surface Mount
Numar pini
3 + 2 Tab
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
7.47mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Dimensiune celula
IPD320N20N3 G
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Inaltime
2.41mm
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-252
Montare
Surface Mount
Numar pini
3 + 2 Tab
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
7.47mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Dimensiune celula
IPD320N20N3 G
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Inaltime
2.41mm