Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IPD25CN10N G
Tip pachet
TO-252
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Latime
7.47mm
Number of Elements per Chip
1
Inaltime
2.41mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,13
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,345
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 1,13
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,345
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 1,13 | € 11,30 |
100 - 240 | € 0,85 | € 8,50 |
250 - 490 | € 0,78 | € 7,80 |
500 - 990 | € 0,72 | € 7,20 |
1000+ | € 0,66 | € 6,60 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IPD25CN10N G
Tip pachet
TO-252
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Latime
7.47mm
Number of Elements per Chip
1
Inaltime
2.41mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V