Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
59 nC @ 4.5 V
Latime
6.223mm
Transistor Material
Si
Dimensiune celula
OptiMOS 3
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.413mm
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,26
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,689
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 2,26
Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,689
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 10 | € 2,26 | € 22,60 |
20 - 40 | € 2,07 | € 20,70 |
50 - 90 | € 1,96 | € 19,60 |
100 - 240 | € 1,82 | € 18,20 |
250+ | € 1,69 | € 16,90 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
59 nC @ 4.5 V
Latime
6.223mm
Transistor Material
Si
Dimensiune celula
OptiMOS 3
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.413mm
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.