Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Serie
OptiMOS™-T
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Latime
10.25mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
4.4mm
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 5,89
Buc. (Livrat pe rola) (fara TVA)
€ 7,009
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 5,89
Buc. (Livrat pe rola) (fara TVA)
€ 7,009
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
10 - 20 | € 5,89 | € 29,45 |
25 - 45 | € 5,51 | € 27,55 |
50 - 120 | € 5,07 | € 25,35 |
125+ | € 4,71 | € 23,55 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Serie
OptiMOS™-T
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Latime
10.25mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
4.4mm