Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Latime
10.25mm
Temperatura maxima de lucru
+175 °C
Lungime
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Dimensiune celula
IPB64N25S3-20
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
4.4mm
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 6,63
Buc. (Intr-un pachet de 5) (fara TVA)
€ 7,89
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 6,63
Buc. (Intr-un pachet de 5) (fara TVA)
€ 7,89
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 5 | € 6,63 | € 33,15 |
10 - 20 | € 5,43 | € 27,15 |
25 - 45 | € 5,06 | € 25,30 |
50 - 120 | € 4,63 | € 23,15 |
125+ | € 4,28 | € 21,40 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Latime
10.25mm
Temperatura maxima de lucru
+175 °C
Lungime
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Dimensiune celula
IPB64N25S3-20
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
4.4mm