Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Serie
OptiMOS™-T
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Latime
10.25mm
Temperatura maxima de lucru
+175 °C
Lungime
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
4.4mm
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Serie
OptiMOS™-T
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Latime
10.25mm
Temperatura maxima de lucru
+175 °C
Lungime
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
4.4mm