Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
23.8 A
Maximum Drain Source Voltage
650 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
176 W
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.57mm
Number of Elements per Chip
1
Lungime
10.31mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
9.45mm
Dimensiune celula
CoolMOS P6
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 4,00
Buc. (Intr-un pachet de 2) (fara TVA)
€ 4,76
Buc. (Intr-un pachet de 2) (cu TVA)
2
€ 4,00
Buc. (Intr-un pachet de 2) (fara TVA)
€ 4,76
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 4,00 | € 8,00 |
10 - 98 | € 3,31 | € 6,62 |
100 - 498 | € 2,85 | € 5,70 |
500 - 998 | € 2,42 | € 4,84 |
1000+ | € 2,22 | € 4,44 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
23.8 A
Maximum Drain Source Voltage
650 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
176 W
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.57mm
Number of Elements per Chip
1
Lungime
10.31mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
9.45mm
Dimensiune celula
CoolMOS P6
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Detalii produs
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.