Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-263
Timp montare
Surface Mount
Numar pini
7 + Tab
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
10.25mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10mm
Typical Gate Charge @ Vgs
156 nC @ 10 V
Inaltime
4.4mm
Dimensiune celula
IPB180N10S4-02
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-263
Timp montare
Surface Mount
Numar pini
7 + Tab
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
10.25mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10mm
Typical Gate Charge @ Vgs
156 nC @ 10 V
Inaltime
4.4mm
Dimensiune celula
IPB180N10S4-02
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V